INVESTIGATION OF MUON STATES IN SILICON AND GERMANIUM BY FIELD-QUENCHING AND RF-MU-SR

Authors
IWANOWSKI M MAIER K MAJOR J PFIZ T SCHEUERMANN R SCHIMMELE L SEEGER A HAMPELE M
Citation
M. Iwanowski et al., INVESTIGATION OF MUON STATES IN SILICON AND GERMANIUM BY FIELD-QUENCHING AND RF-MU-SR, Hyperfine interactions, 86(1-4), 1994, pp. 681-686
Citations number
9
Categorie Soggetti
Physics, Atomic, Molecular & Chemical","Physics, Nuclear","Physics, Condensed Matter
Journal title
Hyperfine interactions → ACNP
ISSN journal
03043843
Volume
86
Issue
1-4
Year of publication
1994
Pages
681 - 686
Database
ISI
SICI code
0304-3843(1994)86:1-4<681:IOMSIS>2.0.ZU;2-9
Abstract
The temperature dependence of the three states of positive muons in th e semiconductors with diamond structure (mu+ in diamagnetic state mu(d ) and paramagnetic muonium Mu and Mu) have been investigated on six S i (pure, B and P doped) and four Ge (ultrapure, CZ-grown undoped, Ga a nd Sb doped) single crystals by longitudinal field-quenching and radio -frequency mu+SR. Clear evidence for the transition Mu --> mu(d) is f ound. The influence of light-induced charge-carriers is shown to be qu ite different in p- and n-type material.