MUON SPIN-RESONANCE AND REPOLARIZATION IN AMORPHOUS-SILICON MONOXIDE (A-SIO)

Studies of the muonium fractions in the amorphous oxide a-SiO have bee n carried out by RF resonance at TRIUMF, Canada and LF repolarization techniques at RAL, U.K. The resonance measurements confirm the presenc e of the interstitial Mu centre in this intermediate oxide of silicon. Analysis of the data gathered at RAL, using a recently-developed fitt ing technique, reveals that the Mu state is present here as well, but with lower relative fractions than in a-Si. However, as in the latter material, but in contrast to c-Si, this bond-centre species appears t o be stable up to room temperature.