1.3-MU-M WAVELENGTH, LOW-THRESHOLD STRAINED-QUANTUM-WELL LASER ON P-TYPE SUBSTRATE

Authors
NOBUHARA H INOUE T WATANABE T TANAKA K ODAGAWA T ABE T WAKAO K
Citation
H. Nobuhara et al., 1.3-MU-M WAVELENGTH, LOW-THRESHOLD STRAINED-QUANTUM-WELL LASER ON P-TYPE SUBSTRATE, Electronics Letters, 30(16), 1994, pp. 1292-1293
Citations number
3
Categorie Soggetti
Engineering, Eletrical & Electronic
Journal title
Electronics Letters → ACNP
ISSN journal
00135194
Volume
30
Issue
16
Year of publication
1994
Pages
1292 - 1293
Database
ISI
SICI code
0013-5194(1994)30:16<1292:1WLSLO>2.0.ZU;2-7
Abstract
The authors fabricated 1.3mum wavelength strained quantum well lasers on a p-type substrate. Extremely low threshold currents (1.0mA at 20-d egrees-C, 3.5mA at 80-degrees-C) were obtained with the optimised stru cture. 1 Gbit/s modulation was demonstrated at close to zero bias with an eye opening of 62%.