HIGH-POWER, RELIABLE 645-NM COMPRESSIVELY STRAINED GAINP GAALINP LASER-DIODES/

Authors
OU SS YANG JJ JANSEN M HESS C HAYASHIDA P TU C ALVAREZ F
Citation
Ss. Ou et al., HIGH-POWER, RELIABLE 645-NM COMPRESSIVELY STRAINED GAINP GAALINP LASER-DIODES/, Electronics Letters, 30(16), 1994, pp. 1303-1305
Citations number
6
Categorie Soggetti
Engineering, Eletrical & Electronic
Journal title
Electronics Letters → ACNP
ISSN journal
00135194
Volume
30
Issue
16
Year of publication
1994
Pages
1303 - 1305
Database
ISI
SICI code
0013-5194(1994)30:16<1303:HR6CSG>2.0.ZU;2-0
Abstract
CW output powers in excess of 1 W and reliable CW output powers of 250 mW at room temperature from double quantum well compressively strained GaInP/GaAlInP laser diodes with an emission wavelength of 645nm were demonstrated. An anomalous dependence of threshold current density and wavelength on GaInP/GaAlInP laser diode stripe width was characterise d.