CW GAAS MITATT SOURCE ON COPPER HEATSINK UP TO 160GHZ

Authors
POBL M BOGNER W GAUL L
Citation
M. Pobl et al., CW GAAS MITATT SOURCE ON COPPER HEATSINK UP TO 160GHZ, Electronics Letters, 30(16), 1994, pp. 1316-1317
Citations number
12
Categorie Soggetti
Engineering, Eletrical & Electronic
Journal title
Electronics Letters → ACNP
ISSN journal
00135194
Volume
30
Issue
16
Year of publication
1994
Pages
1316 - 1317
Database
ISI
SICI code
0013-5194(1994)30:16<1316:CGMSOC>2.0.ZU;2-L
Abstract
The performance of a GaAs pn-junction transit time device with mixed t unnel-avalanche breakdown is described. At 164GHz a CW output power of 1 mW has been achieved in the fundamental mode with devices on copper heatsink. This is to date the highest frequency achieved with CW GaAs diodes. The corresponding noise measure is 28dB at 160GHz.