HIGH-SPEED INGAAS ON SI METAL-SEMICONDUCTOR-METAL PHOTODETECTORS

Authors
DROGE E SCHANBEL RF BOTTCHER EH GRUNDMANN M KROST A BIMBERG D
Citation
E. Droge et al., HIGH-SPEED INGAAS ON SI METAL-SEMICONDUCTOR-METAL PHOTODETECTORS, Electronics Letters, 30(16), 1994, pp. 1348-1350
Citations number
9
Categorie Soggetti
Engineering, Eletrical & Electronic
Journal title
Electronics Letters → ACNP
ISSN journal
00135194
Volume
30
Issue
16
Year of publication
1994
Pages
1348 - 1350
Database
ISI
SICI code
0013-5194(1994)30:16<1348:HIOSMP>2.0.ZU;2-Y
Abstract
High-speed long-wavelength metal-semiconductor-metal (MSM) photodetect ors were fabricated on the Fe-doped InP/GaAs material system on Si. Th e detector layers were grown by MOCVD on exactly oriented Si(001) patt erned with submicrometre pitch V-grooves. The devices show a fast impu lse response (44ps FWHM, 83 ps fall time) and a large bandwidth of 3.4 GHz for illumination with 1.3mum light pulses at 5V bias.