RADIATION-INDUCED DEFECTS IN RADIATION-HARD AND SOFT OXIDES

The point defects of P(b) and E' in radiation hard and soft Si-SiO2 sa mples were examined using electron spin resonance (ESR). The experimen tal results showed that these defects were correlated with the ways of oxidation process, the dosage of Co-60 radiation and the radiation bi as field. Besides, the DELTAH (peak of peak) of P(b) and E' indicated that P(b) is the defect with slow electron spin relaxation time while E' is the defect with fast electron spin relaxation time. Finally, the experimental results are explained qualitatively.