FAR-INFRARED PHOTOCONDUCTIVITY MECHANISM ON SHALLOW IMPURITY IN GAAS

Authors
CHEN ZH LIU PL ZHOU T SHI GL LU W HUANG XL SHEN XC
Citation
Zh. Chen et al., FAR-INFRARED PHOTOCONDUCTIVITY MECHANISM ON SHALLOW IMPURITY IN GAAS, Acta physica Sinica, 3(6), 1994, pp. 453-459
Citations number
NO
Categorie Soggetti
Physics
Journal title
Acta physica Sinica → ACNP
ISSN journal
10003290
Volume
3
Issue
6
Year of publication
1994
Pages
453 - 459
Database
ISI
SICI code
1000-3290(1994)3:6<453:FPMOSI>2.0.ZU;2-F
Abstract
We report the far-infrared photoconductivity spectroscopy (FIRPCS) of the high purity n-GaAs grown by molecular beam epitaxial (MBE) techniq ue. The current-voltage (I-V) measurement and FIRPCS under different e lectric field strength have been performed on high purity n-GaAs at 4. 2 K. Except for photothermal ionization process, a new far-infrared ph otoconductivity (FIRPC) mechanism is observed. This photo ionization p rocess is assisted by impact ionization and depends on external electr ic field. This new mechanism originates from photo-field ionization.