INTERFACIAL STUDY OF NB JOSEPHSON-JUNCTIONS WITH OVERLAYER STRUCTURE

Authors
Citation
S. Morohashi, INTERFACIAL STUDY OF NB JOSEPHSON-JUNCTIONS WITH OVERLAYER STRUCTURE, IEICE transactions on electronics, E77C(8), 1994, pp. 1150-1156
Citations number
NO
Categorie Soggetti
Engineering, Eletrical & Electronic
ISSN journal
09168524
Volume
E77C
Issue
8
Year of publication
1994
Pages
1150 - 1156
Database
ISI
SICI code
0916-8524(1994)E77C:8<1150:ISONJW>2.0.ZU;2-F
Abstract
We compare interfaces of Nb/AlO(x)-Al/Nb and Nb/ZrO(x)-Zr/Nb junctions using secondary ion mass spectroscopy and cross-sectional transmissio n electron microscopy. We have clarified that an interface of the Nb/A lO(x)-Al/Nb junction is drastically different from that of the Nb/ZrO( x)-Zr/Nb junction. An adsorbed water vapor layer plays an important ro le in suppressing grain boundary diffusion between Nb and Al at the in terface of the Nb/AlO(x)-Al/Nb junction. In depositing Nb and Al at lo w power and cooling the substrate, it is important to control the form ation of the adsorbed water vapor layer for fabricating Nb/AlO(x)-Al/N b junctions exhibiting excellent current-voltage characteristics.