FABRICATION AND CHARACTERIZATION OF METAL-INSULATOR-SEMICONDUCTOR FIELD-EFFECT TRANSISTORS USING SPUTTERED SILICON-NITRIDE FILM AS A GATE DIELECTRIC

Authors
SUNDARAM KB SESHAN SS
Citation
Kb. Sundaram et Ss. Seshan, FABRICATION AND CHARACTERIZATION OF METAL-INSULATOR-SEMICONDUCTOR FIELD-EFFECT TRANSISTORS USING SPUTTERED SILICON-NITRIDE FILM AS A GATE DIELECTRIC, International journal of electronics, 77(1), 1994, pp. 61-69
Citations number
19
Categorie Soggetti
Engineering, Eletrical & Electronic
Journal title
International journal of electronics → ACNP
ISSN journal
00207217
Volume
77
Issue
1
Year of publication
1994
Pages
61 - 69
Database
ISI
SICI code
0020-7217(1994)77:1<61:FACOMF>2.0.ZU;2-T
Abstract
RF magnetron sputter deposited silicon nitride film was used as the ga te dielectric material for the fabrication of metal-insulator-semicond uctor field effect transistors, The fabrication process of an enhancem ent type n-channel device is discussed in detail. The electrical measu rements for the fabricated devices indicated low threshold voltages.