GROWTH OF ORIENTED ALUMINUM NITRIDE FILMS ON SILICON BY CHEMICAL-VAPOR-DEPOSITION

Aluminium nitride films were grown on silicon substrates using the che mical vapour deposition (CVD) method. The properties of the films were studied by scanning electron microscopy (SEM), atomic force microscop e (AFM) measurements, X-ray diffraction and Raman scattering. The resu lting films were strongly textured and had a preferential orientation with the c-axis normal to the surface, the Raman spectra showed two pe aks at 607 and 653 cm-1 and two large bands at 750 and 900 cm-1 of sma ller intensity. Both the macro- and micro-Raman spectra showed the sam e peaks.