Complete muc-Si:H p-i-n solar cells have been prepared by the very hig
h frequency glow discharge method. Up to now, intrinsic muc-Si:H has n
ever attracted much attention as a photovoltaic active material. Howev
er, an efficiency of 4.6% and remarkably high short circuit current de
nsities of up to 21.9 mA/cm2 due to an enhanced absorption in the near
-infrared could be obtained. First light-soaking experiments indicate
no degradation for the entirely muc-Si:H cells. Voltage-dependent spec
tral response measurements suggest that the carrier transport in compl
ete muc-Si:H p-i-n cells may possibly be cosupported by diffusion (in
addition to drift).