COMPLETE MICROCRYSTALLINE P-I-N SOLAR-CELL - CRYSTALLINE OR AMORPHOUSCELL BEHAVIOR

Citation
J. Meier et al., COMPLETE MICROCRYSTALLINE P-I-N SOLAR-CELL - CRYSTALLINE OR AMORPHOUSCELL BEHAVIOR, Applied physics letters, 65(7), 1994, pp. 860-862
Citations number
17
Categorie Soggetti
Physics, Applied
Journal title
ISSN journal
00036951
Volume
65
Issue
7
Year of publication
1994
Pages
860 - 862
Database
ISI
SICI code
0003-6951(1994)65:7<860:CMPS-C>2.0.ZU;2-J
Abstract
Complete muc-Si:H p-i-n solar cells have been prepared by the very hig h frequency glow discharge method. Up to now, intrinsic muc-Si:H has n ever attracted much attention as a photovoltaic active material. Howev er, an efficiency of 4.6% and remarkably high short circuit current de nsities of up to 21.9 mA/cm2 due to an enhanced absorption in the near -infrared could be obtained. First light-soaking experiments indicate no degradation for the entirely muc-Si:H cells. Voltage-dependent spec tral response measurements suggest that the carrier transport in compl ete muc-Si:H p-i-n cells may possibly be cosupported by diffusion (in addition to drift).