LOW-TEMPERATURE HOMOEPITAXIAL GROWTH ON SI(111) MEDIATED BY THIN OVERLAYERS OF AU

High quality homoepitaxial growth of Si on Si(111) through an overlaye r of Au is shown to occur at 450-500-degrees-C, far below the temperat ure required for growth of Si of similar quality on bare Si(111). Film s of unlimited thickness can be obtained with excellent crystalline qu ality, as revealed by Rutherford backscattering spectrometry ion chann eling measurements (chi(min)=2.2%). A distinct range of Au coverage (0 .4-1.0 monolayer) results in the best quality epitaxy, with no measura ble amount of Au trapped at either the interface or within the grown f ilms. Cross-sectional transmission electron microscopy reveals that in films grown with Au coverages below and above the optimum range, the predominant defects are twins on (111) planes and Au inclusions, respe ctively.