LOW-THRESHOLD 1.3-MU-M WAVELENGTH, INGAASP STRAINED-LAYER MULTIPLE-QUANTUM-WELL LASERS GROWN BY GAS-SOURCE MOLECULAR-BEAM EPITAXY

Authors
SHIAU GJ CHAO CP BURROWS PE FORREST SR
Citation
Gj. Shiau et al., LOW-THRESHOLD 1.3-MU-M WAVELENGTH, INGAASP STRAINED-LAYER MULTIPLE-QUANTUM-WELL LASERS GROWN BY GAS-SOURCE MOLECULAR-BEAM EPITAXY, Applied physics letters, 65(7), 1994, pp. 892-894
Citations number
11
Categorie Soggetti
Physics, Applied
Journal title
Applied physics letters → ACNP
ISSN journal
00036951
Volume
65
Issue
7
Year of publication
1994
Pages
892 - 894
Database
ISI
SICI code
0003-6951(1994)65:7<892:L1WISM>2.0.ZU;2-Q
Abstract
We report the growth, by gas source molecular beam epitaxy (GSMBE) of low-threshold 1.3-mum wavelength strained-layer In0.86Ga0.14As0.52P0.4 8/In0.86Ga0.14A0.3P0.7 separate confinement heterostructure multiple q uantum well lasers. Threshold currents as low as 16 mA were measured f or a 390 X 5-mum ridge laser, and a threshold current density of J(th) = 490 A/cm2 was achieved for a 1200 X 5-mum device. Apparently, this is the lowest value of J(th) reported to date for 1.3-mum lasers grown by GSMBE, and is comparable to the best devices grown by other techni ques such as chemical beam epitaxy and metalorganic vapor phase epitax y.