We present a theoretical study of electron and hole states in InAs/GaS
b superlattices using a realistic: microscopic pseudopotential complex
-band-structure approach. A rectangular potential is used to predict t
he critical in-plane magnetic field that will result in a semiconducti
ng state for a variety of InAs/GaSb superlattices. It is found that th
e critical held is insensitive to increases in superlattice period bey
ond a particular value.