CORE-LEVEL PHOTOEMISSION AND THE STRUCTURE OF THE SI SIO2 INTERFACE -A REAPPRAISAL/

Citation
Mmb. Holl et al., CORE-LEVEL PHOTOEMISSION AND THE STRUCTURE OF THE SI SIO2 INTERFACE -A REAPPRAISAL/, Applied physics letters, 65(9), 1994, pp. 1097-1099
Citations number
10
Categorie Soggetti
Physics, Applied
Journal title
ISSN journal
00036951
Volume
65
Issue
9
Year of publication
1994
Pages
1097 - 1099
Database
ISI
SICI code
0003-6951(1994)65:9<1097:CPATSO>2.0.ZU;2-E
Abstract
Photoemission spectroscopy of spherosiloxane cluster derived Si/SiO(x) interfaces has allowed the direct assignment of observed spectral fea tures to specific chemical moieties. The implications of these assignm ents for structural models of the Si/SiO2 interface are explored. Mode ls specifically constructed to be consistent with photoemission data a re shown to be incorrect after reanalysis of core-level shifts based o n the recently synthesized model systems. A new model for the Si/SiO2 interface is proposed which is consistent with the current understandi ng of photoemission for Si/SiO(x) interfaces as well as with results f rom numerous other experiments.