INTERSUBBAND HOLE ABSORPTION IN GAAS-GALNP QUANTUM-WELLS GROWN BY GAS-SOURCE MOLECULAR-BEAM EPITAXY

Authors
BROWN GJ HEGDE SM HOFF J JELEN C SLIVKEN S MICHEL E DUCHEMIN O BIGAN E RAZEGHI M
Citation
Gj. Brown et al., INTERSUBBAND HOLE ABSORPTION IN GAAS-GALNP QUANTUM-WELLS GROWN BY GAS-SOURCE MOLECULAR-BEAM EPITAXY, Applied physics letters, 65(9), 1994, pp. 1130-1132
Citations number
14
Categorie Soggetti
Physics, Applied
Journal title
Applied physics letters → ACNP
ISSN journal
00036951
Volume
65
Issue
9
Year of publication
1994
Pages
1130 - 1132
Database
ISI
SICI code
0003-6951(1994)65:9<1130:IHAIGQ>2.0.ZU;2-L
Abstract
P-doped GaAs-GaInP quantum wells have been grown on GaAs substrate by gas source molecular beam epitaxy. Structural quality has been evidenc ed by x-ray diffraction. A narrow low-temperature photoluminescence fu ll width at half-maximum has been measured. Strong hole intersubband a bsorption has been observed at 9 mum, and its dependence on light pola rization has been investigated.