ASSESSMENT OF HOT-HOLE-INDUCED INTERFACE STATES AND TRAPPED CARRIERS IN SUBMICRON-N (METAL-OXIDE-SEMICONDUCTOR FIELD-EFFECT TRANSISTORS) BYGATE-TO-DRAIN CAPACITANCE MEASUREMENT

Change in small-signal gate-to-drain capacitance of an n-metal-oxide s emiconductor field effect transistor as a function of gate and drain v oltages before and after drain avalanche hot-hole injection was used t o study the nature of trapped charge. The results show the trapping of holes and generation of acceptor interface states at the top half of the silicon band gap. Comparison with the P(bo) dangling bond model wa s made and the difference explained.