EXPERIMENTAL-DETERMINATION OF THE ELECTRICAL BAND-GAP ENERGY OF POROUS SILICON AND THE BAND OFFSETS AT THE POROUS SILICON CRYSTALLINE SILICON HETEROJUNCTION

Authors
ROMSTAD FP VEJE E
Citation
Fp. Romstad et E. Veje, EXPERIMENTAL-DETERMINATION OF THE ELECTRICAL BAND-GAP ENERGY OF POROUS SILICON AND THE BAND OFFSETS AT THE POROUS SILICON CRYSTALLINE SILICON HETEROJUNCTION, Physical review. B, Condensed matter, 55(8), 1997, pp. 5220-5225
Citations number
23
Categorie Soggetti
Physics, Condensed Matter
Journal title
Physical review. B, Condensed matter → ACNP
ISSN journal
01631829
Volume
55
Issue
8
Year of publication
1997
Pages
5220 - 5225
Database
ISI
SICI code
0163-1829(1997)55:8<5220:EOTEBE>2.0.ZU;2-Y
Abstract
Photovoltaic and photocurrent measurements have been carried out on a series of samples consisting of porous silicon on top of crystalline s ilicon. From the experimental data set, the electrical band-gap energy of porous silicon is deduced to be (1.80+/-0.02) eV, and the conducti on-band and valence-band offsets at the porous silicon/crystalline sil icon heterojunction are determined to be (0.12+/-0.01) eV and (0.57+/- 0.03) eV, respectively. The results are compared to previous determina tions and discussed.