INFLUENCE OF COMPOSITION FLUCTUATIONS IN AL(GA)AS BARRIERS ON THE EXCITON LOCALIZATION IN THIN GAAS QUANTUM-WELLS

Authors
RAMSTEINER M HEY R KLANN R JAHN U GORBUNOVA I PLOOG KH
Citation
M. Ramsteiner et al., INFLUENCE OF COMPOSITION FLUCTUATIONS IN AL(GA)AS BARRIERS ON THE EXCITON LOCALIZATION IN THIN GAAS QUANTUM-WELLS, Physical review. B, Condensed matter, 55(8), 1997, pp. 5239-5242
Citations number
13
Categorie Soggetti
Physics, Condensed Matter
Journal title
Physical review. B, Condensed matter → ACNP
ISSN journal
01631829
Volume
55
Issue
8
Year of publication
1997
Pages
5239 - 5242
Database
ISI
SICI code
0163-1829(1997)55:8<5239:IOCFIA>2.0.ZU;2-0
Abstract
The localization of excitons in thin GaAs/Al(Ga)As quantum wells has b een investigated by micro- and time-resolved photoluminescence (FL) sp ectroscopy. A fine-structured line shape in micro-PL is found not only for exciton recombination in the GaAs well but also, very similarly, for the Al(Ga)As barrier luminescence. By means of time-resolved measu rements we show that the observed barrier luminescence probes selectiv ely a barrier region close to the top interface of the quantum well. O ur results directly reveal the essential contribution of Al(Ga)As comp osition fluctuations to the excition localization in GaAs/Al(Ga)As qua ntum wells.