TECHNOLOGICAL DEVELOPMENTS TOWARD DEEP-SUBMICRON P-MOS TRANSISTORS

This article presents a position statement involving research toward t he technological feasibility of producing p-MOS transistors with actua l channel lengths approaching dimensions less than 100 nm. This work i s part of a complementary programme where the theoretical possibility of scaling to such dimensions are also being studied. However we addre ss here what we consider to be the major technological issues, namely the gate dielectric, source drain extensions and the composition of th e gate material.