ION-ASSISTED DEPOSITION WITH AN ADVANCED PLASMA SOURCE

Citation
S. Pongratz et A. Zoller, ION-ASSISTED DEPOSITION WITH AN ADVANCED PLASMA SOURCE, Radiation effects and defects in solids, 127(3-4), 1994, pp. 327-339
Citations number
18
Categorie Soggetti
Physics, Condensed Matter","Nuclear Sciences & Tecnology
ISSN journal
10420150
Volume
127
Issue
3-4
Year of publication
1994
Pages
327 - 339
Database
ISI
SICI code
1042-0150(1994)127:3-4<327:IDWAAP>2.0.ZU;2-K
Abstract
Thermal evaporation is commonly used for the production of optical coa tings. The low packing density of thermally evaporated films implies o ptical constants and mechanical properties which are inferior to those of the bulk materials. For the investigations of the plasma IAD proce ss we used a newly developed advanced plasma source (APS) with special features. The properties of dielectric layers deposited with plasma-I AD will be presented in comparison to conventional thermally evaporate d films. In particular, the results of scratch resistant layers in com bination with antireflection coatings on organic substrates will be sh own.