NUCLEAR MICROPROBE APPLICATION TO SEMICONDUCTOR PROCESS-DEVELOPMENT -SILICIDE FORMATION AND MULTILAYERED STRUCTURE

Authors
TAKAI M KATAYAMA Y LOHNER T KINOMURA A RYSSEL H TSIEN PH BURTE E SATOU M CHAYAHARA A
Citation
M. Takai et al., NUCLEAR MICROPROBE APPLICATION TO SEMICONDUCTOR PROCESS-DEVELOPMENT -SILICIDE FORMATION AND MULTILAYERED STRUCTURE, Radiation effects and defects in solids, 127(3-4), 1994, pp. 357-365
Citations number
20
Categorie Soggetti
Physics, Condensed Matter","Nuclear Sciences & Tecnology
Journal title
Radiation effects and defects in solids → ACNP
ISSN journal
10420150
Volume
127
Issue
3-4
Year of publication
1994
Pages
357 - 365
Database
ISI
SICI code
1042-0150(1994)127:3-4<357:NMATSP>2.0.ZU;2-0
Abstract
A nuclear microprobe combined with Rutherford backscattering (RBS) has been applied to analysis of silicide formation processes and a multi- layered structure. Lateral overgrowth of cobalt silicide layers on sil icon was found to be suppressed by an additional ion beam mixing proce ss, though residual cobalt atoms were found on insulating mask layers by ion beam mixing. Energy shift arising from RBS kinematics was found to deform tomographic images of multi-layered structures. Such deform ation was easily corrected by simple data processing.