ON MODELING OF ION-IMPLANTATION AT HIGH-TEMPERATURES

Ion implantation in silicon offers a variety of technological advantag es like excellent uniformity and reproducibility. Areas where no dopan ts are wanted can be screened easily by covering layers. The annealing of the damage produced by the implanted dopants and the anomalous dop ant migration during damage annealing is, however, not fully understoo d. In situ annealing of the damage during the implantation process giv es additional insight into dopant diffusion and point defect dynamics. This paper outlines the basics of the pair diffusion models used to d escribe the observed diffusion phenomena. Special attention is given t o a discussion of the basic assumptions used in the derivation of the diffusion model and of the parameters involved.