ATHERMAL EFFECTS IN ION-IMPLANTED LAYERS

Defect structure and electrical characterization of boron and arsenic implanted layers has been investigated for implantation under athermal (light) excitation. This Photon Assisted (PA) implantation owes its s pecific properties to an additional electric field acting on charged p articles including carriers and charged defects. It was shown that in case of n-type silicon this extra held draws charged vacancies and sel f-interstitials towards each other and, thus, diminishes transient dif fusion of boron. This effect resulted in junctions which are about 20% shallower compared to conventionally processed reference wafers. Expe riments using light of an Ar-ion laser and white light of a high press ure Xe are lamp were compared. Some deactivation of carriers in the de eper laying parts of the p-region was always a by-product.