PHONON RELAXATION PROCESSES IN CRYSTALS (NANO3) AT HIGH-PRESSURE AND LOW-TEMPERATURE

Authors
JORDAN M SCHUCH A RIGHINI R SIGNORINI GF JODL HJ
Citation
M. Jordan et al., PHONON RELAXATION PROCESSES IN CRYSTALS (NANO3) AT HIGH-PRESSURE AND LOW-TEMPERATURE, The Journal of chemical physics, 101(5), 1994, pp. 3436-3443
Citations number
31
Categorie Soggetti
Physics, Atomic, Molecular & Chemical
Journal title
The Journal of chemical physics → ACNP
ISSN journal
00219606
Volume
101
Issue
5
Year of publication
1994
Pages
3436 - 3443
Database
ISI
SICI code
0021-9606(1994)101:5<3436:PRPIC(>2.0.ZU;2-L
Abstract
NaNO3 is investigated in a diamond anvil cell in the pressure range of 0-9 GPa at 21 and 142 K by means of high-resolution Raman spectroscop y (HRRS). The pressure dependent linewidth of nu(1), (symmetric stretc h) is determined and discussed in the framework of anharmonic lattice dynamics. The main relaxation pathways are depopulation processes whic h are influenced by anharmonic terms in the expansion of the crystal p otential and by multiphonon densities of states. The interpretation is supported by numerical calculation of multiphonon densities of states .