EFFECTS OF EXTRA LOW-FREQUENCY NOISE INJECTION ON MICROWAVE SIGNALS GENERATED BY A GAIN-SWITCHED SEMICONDUCTOR-LASER

Authors
LIMA CR DAVIES PA
Citation
Cr. Lima et Pa. Davies, EFFECTS OF EXTRA LOW-FREQUENCY NOISE INJECTION ON MICROWAVE SIGNALS GENERATED BY A GAIN-SWITCHED SEMICONDUCTOR-LASER, Applied physics letters, 65(8), 1994, pp. 950-952
Citations number
10
Categorie Soggetti
Physics, Applied
Journal title
Applied physics letters → ACNP
ISSN journal
00036951
Volume
65
Issue
8
Year of publication
1994
Pages
950 - 952
Database
ISI
SICI code
0003-6951(1994)65:8<950:EOELNI>2.0.ZU;2-2
Abstract
Low-frequency upconverted noise (1/f laser intensity noise and the low -frequency noise of the driver source) has been identified as the domi nant noise generation mechanism in microwave signals generated by a Fa bry-Perot gain-switched semiconductor laser. An experimental investiga tion is carried out using extra low-frequency noise injection added to the drive signal. Results show the dependence of the broadband intens ity noise level, formed by the overlapping of the upconverted noise si debands present at each harmonic, on gain-switching input parameters.