TRANSIENT-BEHAVIOR AND MEMORY EFFECT OF A PBZRXTI1-XO3 YBA2CU3O7-X 3-TERMINAL DEVICE/

Authors
LIN H WU NJ XIE K LI XY IGNATIEV A
Citation
H. Lin et al., TRANSIENT-BEHAVIOR AND MEMORY EFFECT OF A PBZRXTI1-XO3 YBA2CU3O7-X 3-TERMINAL DEVICE/, Applied physics letters, 65(8), 1994, pp. 953-955
Citations number
11
Categorie Soggetti
Physics, Applied
Journal title
Applied physics letters → ACNP
ISSN journal
00036951
Volume
65
Issue
8
Year of publication
1994
Pages
953 - 955
Database
ISI
SICI code
0003-6951(1994)65:8<953:TAMEOA>2.0.ZU;2-P
Abstract
The transient behavior of a ferroelectric PbZr(x)Ti(1-x)O3 and superco nducting YBa2Cu3O7-x three-terminal device has been investigated. Four -state behavior, that is, two polarization states of the PbZr(x)Ti(1-x )O3 gate and superconducting and normal states of the YBa2Cu3O7-x laye r, has been observed. It was shown that the biased superconducting cha nnel can be switched from superconducting state to the normal state by the flowing charge during the polarization switching of the PbZr(x)Ti (1-x)O3 gate. The nonvolatility of this device based on the different polarization states of the ferroelectric gate has also been demonstrat ed.