LOW-ENERGY SEPARATION BY IMPLANTATION OF OXYGEN STRUCTURES VIA PLASMASOURCE ION-IMPLANTATION

The initial results from an investigation into the feasibility of usin g plasma source ion implantation (PSII) to produce separation by impla ntation of oxygen structures in silicon are reported. Oxygen ions are implanted into p-type (111) oriented silicon wafers using a -30 kV acc eleration potential and an oxygen plasma at a pressure of 0.2 mTorr. T he effects of ion dose and high-voltage pulse width were examined. Som e of the implanted wafers were annealed. Both the as-implanted and ann ealed wafers were examined using secondary-ion-mass spectroscopy and A uger electron spectroscopy. The initial results show that oxygen can b e implanted by PSII and suggest that a buried layer of silicon dioxide has been formed in the implanted wafers.