L. Zhang et al., LOW-ENERGY SEPARATION BY IMPLANTATION OF OXYGEN STRUCTURES VIA PLASMASOURCE ION-IMPLANTATION, Applied physics letters, 65(8), 1994, pp. 962-964
The initial results from an investigation into the feasibility of usin
g plasma source ion implantation (PSII) to produce separation by impla
ntation of oxygen structures in silicon are reported. Oxygen ions are
implanted into p-type (111) oriented silicon wafers using a -30 kV acc
eleration potential and an oxygen plasma at a pressure of 0.2 mTorr. T
he effects of ion dose and high-voltage pulse width were examined. Som
e of the implanted wafers were annealed. Both the as-implanted and ann
ealed wafers were examined using secondary-ion-mass spectroscopy and A
uger electron spectroscopy. The initial results show that oxygen can b
e implanted by PSII and suggest that a buried layer of silicon dioxide
has been formed in the implanted wafers.