The well-crystallized cubic boron nitride (c-BN) films have been prepa
red on polycrystalline Ni substrates using a hot filament assisted rf
plasma chemical vapor deposition method. X-ray diffraction showed that
high quality c-BN films had been deposited without hexagonal BN (h-BN
) or amorphous BN codeposition. Both (111) and (100) faces were observ
ed in scanning electron microscopy images. These results suggested tha
t Ni had catalyst effects on the nucleation and the growth of c-BN pha
se and inhibited the formation of h-BN.