29.5-PERCENT-EFFICIENT GALNP GAAS TANDEM SOLAR-CELLS/

Citation
Ka. Bertness et al., 29.5-PERCENT-EFFICIENT GALNP GAAS TANDEM SOLAR-CELLS/, Applied physics letters, 65(8), 1994, pp. 989-991
Citations number
17
Categorie Soggetti
Physics, Applied
Journal title
ISSN journal
00036951
Volume
65
Issue
8
Year of publication
1994
Pages
989 - 991
Database
ISI
SICI code
0003-6951(1994)65:8<989:2GGTS>2.0.ZU;2-H
Abstract
We report on multijunction GaInP/GaAs photovoltaic cells with efficien cies of 29.5% at 1-sun concentration and air mass (AM) 1.5 global and 25.7% 1-sun, AM0. These values represent the highest efficiencies achi eved by any solar cell under these illumination conditions. Three key areas in this technology are identified and discussed; the grid design , front surface passivation of the top cell, and bottom surface passiv ation of both cells. Aspects of cell design related to its operation u nder concentration are also discussed.