EVALUATION OF GROWTH TEMPERATURE, REFRACTIVE-INDEX, AND LAYER THICKNESS OF THIN ZNTE, MNTE, AND CDTE-FILMS BY IN-SITU VISIBLE LASER INTERFEROMETRY

The experimental procedure and the results of in situ determination of growth temperatures, refractive indices at growth temperatures, and t hicknesses of ZnTe, cubic MnTe, and CdTe thin films grown by molecular beam epitaxy (MBE) are reported. Visible laser interferometry with He -Ne laser 0.6328-mum light has been applied in the performed experimen ts. A 290-mum-thick plane-parallel GaP wafer polished to an optical fi nish on both sides has been used as a growth temperature calibration s tandard. The exemplary substrate temperature calibration curves, as we ll as the data gained at dynamic thermal conditions are presented and discussed. The following numerical values concerning refractive indice s n at elevated temperatures have been evaluated from experimental dat a for the MBE grown films: n (286-degrees-C)ZnTe = 2.51, n (175-degree s-C)ZnTe = 2.49, n(286-degrees-C)cubic MnTe = 3.26, and the extinction coefficient k (286-degrees-C)CdTe = 0.23.