CHEMICAL BEAM EPITAXY GROWTH OF 1.3-MU-M INGAASP INP DOUBLE-HETEROSTRUCTURE LASERS USING ALL GAS-SOURCE DOPING/

Low threshold 1.3 mum InGaAsP/InP double heterostructure lasers were f abricated using all gas source chemical beam epitaxy (CBE). Gas source doping of n- and p-type InP and InGaAs was successfully achieved usin g tetraethyltin and diethylzinc. The minimum threshold current density (J(th)) for a 1800 mum cavity length laser was 680 A/cm-2. This is lo west J(th) value reported for CBE grown double heterostructure lasers at 1.3 mum. These lasers exhibited an internal quantum efficiency (eta (i)) and internal loss (alpha(i)) of 51% and 16 cm-1, respectively. Th e temperature dependence of the threshold current is described by a si ngle exponential T0 of 51 K.