AEROSOL-ASSISTED CHEMICAL-VAPOR-DEPOSITION OF COPPER - A LIQUID DELIVERY APPROACH TO METAL THIN-FILMS

Aerosol-assisted chemical vapor deposition has been used to attain hig h deposition rates (up to 800 angstrom min-1 at 140-degrees-C) of crys talline, low-resistivity (1.7-3.5 muOMEGA cm) Cu films at low temperat ures (120-200-degrees-C) from toluene solutions of (hfac)Cu(1,5-COD), where 1,5-COD=1,5-cyclooctadiene, in a warm-wall reactor. Activation e nergies calculated from the deposition rate as a function of the prehe ating temperatures and the substrate temperature (varying also the noz zle-substrate distance) were 6.8, 8.9 (0.7 cm), and 9.1 (1.7 cm) kcal mol-1, respectively. The activation energy of 6.8 kcal mol-1 is simila r to the enthalpy of vaporization of (hfac)Cu(1,5-COD).