OBSERVATION OF A NEGATIVE PERSISTENT PHOTOCONDUCTIVITY EFFECT IN IN0.25GA0.75SB INAS QUANTUM-WELLS/

Authors
LO I MITCHEL WC KASPI R ELHAMRI S NEWROCK RS
Citation
I. Lo et al., OBSERVATION OF A NEGATIVE PERSISTENT PHOTOCONDUCTIVITY EFFECT IN IN0.25GA0.75SB INAS QUANTUM-WELLS/, Applied physics letters, 65(8), 1994, pp. 1024-1026
Citations number
22
Categorie Soggetti
Physics, Applied
Journal title
Applied physics letters → ACNP
ISSN journal
00036951
Volume
65
Issue
8
Year of publication
1994
Pages
1024 - 1026
Database
ISI
SICI code
0003-6951(1994)65:8<1024:OOANPP>2.0.ZU;2-D
Abstract
We have observed a negative persistent photoconductivity effect in In0 .25Ga0.75Sb/InAs quantum wells with Shubnikov-de Haas measurements. Th e saturated reduction of the electron density in the InAs well was abo ut 10%. The electron effective mass was found to be (0.048 +/- 0.004) m0 for an electron density of 18.0 x 10(11) cm-2. The electron quantum lifetime decreased as the electron density was reduced by the negativ e persistent photoconductivity effect due to electron-hole interaction .