PERFORMANCE OF SIC POWER MOSFETS - ON RES ISTANCE VERSUS VOLTAGE CAPABILITY AND SWITCHING SPEED

The DC trade-off ''ON resistance versus voltage capability'' is determ ined for the SiC multicellular Power MOSFET transistor. First, this li mit is analytically calculated for the bulk material. Then, the influe nce of the size of the MOSFET cell is considered. Under dynamic condit ion, the switching behaviour is simulated and analysed. We confirm tha t the DC performances of the SiC device are better than those of Si st ructures. From a dynamic point of view, a degradation can or not occur depending upon the voltage capability of the considered device. The d egradation is due to the drain-gate Miller capacitance increase with t he drain doping value.