VALENCE AND CONDUCTION BAND-EDGES-CHARGE DENSITIES IN GA1-XALXP MIXED-CRYSTALS

Authors
BADI N ABID H SOUDINI B AMRANE N DRIZ M KHELIFA B AOURAG H
Citation
N. Badi et al., VALENCE AND CONDUCTION BAND-EDGES-CHARGE DENSITIES IN GA1-XALXP MIXED-CRYSTALS, Materials chemistry and physics, 38(3), 1994, pp. 243-249
Citations number
22
Categorie Soggetti
Material Science
Journal title
Materials chemistry and physics → ACNP
ISSN journal
02540584
Volume
38
Issue
3
Year of publication
1994
Pages
243 - 249
Database
ISI
SICI code
0254-0584(1994)38:3<243:VACBDI>2.0.ZU;2-9
Abstract
The empirical pseudopotential method (EPM) combined with the virtual c rystal approximation ''VCA'' are used to compute electronic charge den sities at GAMMA and X k-points of the valence and conduction band edge s in the ternary GaAlP semiconductor alloy. These charge densities are used to study the modifications of the bonding and electronic propert ies of the alloy with respect to the molar fraction of Al in GaP.