RECOMBINATION AND JOULE HEATING EFFECTS IN GTO THYRISTORS WITH SPATIALLY VARYING LIFETIMES

Authors
MAWBY PA HU ZR TOWERS MS EVANS MJ BOARD K
Citation
Pa. Mawby et al., RECOMBINATION AND JOULE HEATING EFFECTS IN GTO THYRISTORS WITH SPATIALLY VARYING LIFETIMES, IEE proceedings. Circuits, devices and systems, 141(4), 1994, pp. 292-298
Citations number
12
Categorie Soggetti
Engineering, Eletrical & Electronic
Journal title
IEE proceedings. Circuits, devices and systems → ACNP
ISSN journal
13502409
Volume
141
Issue
4
Year of publication
1994
Pages
292 - 298
Database
ISI
SICI code
1350-2409(1994)141:4<292:RAJHEI>2.0.ZU;2-E
Abstract
In the paper the forward conduction characteristics of the GTO thyrist or are studied. A two-dimensional simulation is performed which solves the semiconductor device equations self consistently with the equatio n for lattice heat conduction. The significance of the different recom bination mechanisms and spatially varying lifetime is considered, alon g with the relative effects of different mobility models. An experimen tal comparison with a 2.5 kV device is made and good agreement is foun d. The effects of heat dissipation in the structure are also considere d.