PULSED-LASER DEPOSITION OF PZT LSCO HETEROSTRUCTURE FOR INTEGRATED FERROELECTRIC DEVICES

Citation
Zg. Liu et al., PULSED-LASER DEPOSITION OF PZT LSCO HETEROSTRUCTURE FOR INTEGRATED FERROELECTRIC DEVICES, Solid state communications, 91(9), 1994, pp. 671-673
Citations number
6
Categorie Soggetti
Physics, Condensed Matter
Journal title
ISSN journal
00381098
Volume
91
Issue
9
Year of publication
1994
Pages
671 - 673
Database
ISI
SICI code
0038-1098(1994)91:9<671:PDOPLH>2.0.ZU;2-L
Abstract
The ferroelectric Pb(Zr0.88Ti0.12)03 (PZT)/conductive La0.5Sr0.5CoO3 ( LSCO) hetero-structures have been prepared on (001) LaAlO3 (LAO) and ( 001) Si single crystal substrates by using pulsed laser deposition (PL D) technique. X-ray differactions showed that the PZT and LSCO layers are single phased with distorted perovskite structure, respectively. T he heterostructure on (001) LAO is highly [001] oriented, whereas the heterostructure on (001) Si is poly-crystalline having double texture of [001] and [110]. With the help of XPS analysis the compositions of PZT film have been determined. Using the LSCO film as bottom electrode the ferroelectric hysteresis of the PZT film has been measured.