QUANTUM CONFINEMENT EFFECTS IN ABSORPTION AND EMISSION OF FREESTANDING POROUS SILICON

Authors
MAUCKNER G REBITZER W THONKE K SAUER R
Citation
G. Mauckner et al., QUANTUM CONFINEMENT EFFECTS IN ABSORPTION AND EMISSION OF FREESTANDING POROUS SILICON, Solid state communications, 91(9), 1994, pp. 717-720
Citations number
17
Categorie Soggetti
Physics, Condensed Matter
Journal title
Solid state communications → ACNP
ISSN journal
00381098
Volume
91
Issue
9
Year of publication
1994
Pages
717 - 720
Database
ISI
SICI code
0038-1098(1994)91:9<717:QCEIAA>2.0.ZU;2-N
Abstract
Free-standing heavily p-doped porous silicon films with varying nanocr ystallite sizes are analysed in absorption and photoluminescence exper iments. Blueshift of the optical absorption and of the PL-IR and S-ban d occurs with increasing porosity, i.e. reduced nanoparticle size. Abs orption and emission data demonstrate a continuous transition from bul k to quantum confinement-controlled Si bandstructure.