PHOSPHORESCENCE AND THERMALLY STIMULATED LUMINESCENCE OF AMORPHOUS SIO2

Thermally Stimulated Luminescence (TSL) and phosphorescence measuremen ts excited by X- and beta rays have been performed above room temperat ure on fused quartz and on thin SiO2 films deposited on a silicon subs trate by the technique of chemical vapour deposition. Although in thes e types Of SiO2 the basic TSL features, noticeably the prominent glow peak at 60 < T < 120-degrees-C, are similar to those already studied i n quartz, some behaviours are different. Specifically, the maximum tem perature of the glow peak shifts linearly to higher temperatures as a consequence of partial pre-heating treatments and the phosphorescence decay shows a t-1 power law. The implications of these results are dis cussed also in comparison with the corresponding ones of crystalline q uartz and with preliminary data on thermally stimulated currents measu rements.