FINE-STRUCTURE IN DIFFERENTIAL CONDUCTANCE OF OXIDIZED NICKEL OBSERVED IN A ROOM-TEMPERATURE STM EXPERIMENT

Citation
W. Olejniczak et M. Bieniecki, FINE-STRUCTURE IN DIFFERENTIAL CONDUCTANCE OF OXIDIZED NICKEL OBSERVED IN A ROOM-TEMPERATURE STM EXPERIMENT, Solid state communications, 101(12), 1997, pp. 877-882
Citations number
21
Categorie Soggetti
Physics, Condensed Matter
Journal title
ISSN journal
00381098
Volume
101
Issue
12
Year of publication
1997
Pages
877 - 882
Database
ISI
SICI code
0038-1098(1997)101:12<877:FIDCOO>2.0.ZU;2-C
Abstract
Direct measurements at room temperature of the current-voltage charact eristics I(V) of a junction between a scanning tunnelling microscope t ip made from W or Ni and an oxidized polycrystalline nickel surface ar e presented, with particular emphasis on a fine structure in the I(V) data. We show that it appears at voltages nearly corresponding to the energies of phonon and magnon excitations in tungsten, nickel and nick el oxide. We interpret the results obtained in terms of the mesoscopic dynamic processes that take place in tunnelling through specific atom ic-scale surface sites. (C) 1997 Elsevier Science Ltd. All rights rese rved.