ENHANCED ZENER TUNNELING IN SILICON

Authors
DICARLO A LUGLI P VOGL P
Citation
A. Dicarlo et al., ENHANCED ZENER TUNNELING IN SILICON, Solid state communications, 101(12), 1997, pp. 921-923
Citations number
10
Categorie Soggetti
Physics, Condensed Matter
Journal title
Solid state communications → ACNP
ISSN journal
00381098
Volume
101
Issue
12
Year of publication
1997
Pages
921 - 923
Database
ISI
SICI code
0038-1098(1997)101:12<921:EZTIS>2.0.ZU;2-T
Abstract
We have investigated Zener tunneling in PIN silicon diodes by means of tight-binding calculations. Even though Zener tunneling is essentiall y a k-conserving process, we are able to demonstrate enhanced Zener tu nneling in indirect band gap material by means of band gap modulation. A realistic example is presented for SiGe-modulated diodes. (C) 1997 Elsevier Science Ltd. All rights reserved.