COMPUTER-AIDED STUDIES ON THE MICROWAVE CHARACTERISTICS OF INP GAINASAND GAAS GAINAS HETEROSTRUCTURE SINGLE-DRIFT-REGION IMPACT AVALANCHE TRANSIT-TIME DIODES

Authors
DASH GN PATI SP
Citation
Gn. Dash et Sp. Pati, COMPUTER-AIDED STUDIES ON THE MICROWAVE CHARACTERISTICS OF INP GAINASAND GAAS GAINAS HETEROSTRUCTURE SINGLE-DRIFT-REGION IMPACT AVALANCHE TRANSIT-TIME DIODES, Journal of physics. D, Applied physics, 27(8), 1994, pp. 1719-1726
Citations number
11
Categorie Soggetti
Physics, Applied
Journal title
Journal of physics. D, Applied physics → ACNP
ISSN journal
00223727
Volume
27
Issue
8
Year of publication
1994
Pages
1719 - 1726
Database
ISI
SICI code
0022-3727(1994)27:8<1719:CSOTMC>2.0.ZU;2-1
Abstract
The potentialities of the material combinations InP/GaInAs and GaAs/Ga InAs for single-drift-region heterojunction Impact avalanche transit t ime diodes are investigated by computer simulation. The results indica te better device performance for the GaAs/GaInAs diodes than for the c orresponding InP/GaInAs diodes. The reason for this is observed to be the large phase distortion caused by tunnelling of charge carriers in the InP/GaInAs diodes. The large phase distortion disturbs the phase r elation between the radiofrequency voltage and current considerably fo r normal impact avalanche transit time mode operation, causing perform ance deterioration in the InP/GaInAs single-drift-region diodes.