A CDSSB PHOTOELECTRODE FOR PHOTOELECTROCHEMICAL APPLICATIONS

CdS:Sb thin film photoelectrodes with antimony doping concentration in the range from 0.005-0.5 wt% have been prepared in an aqueous alkalin e medium. Photo-electrochemical cells are then fabricated employing th ese films as an active photoelectrode and the sulphide/polysulphide re dox couple as electrolyte. The electrical and optical properties of th ese cells have been examined under suitable conditions and evaluated i n terms of various cell parameters such as I(sc), V(oc), eta, ff, R(s) , R(sh), n(d) PHI(B) and V(fb). It has been. found that the cell perfo rmance is improved significantly after doping and it is optimum at 0.0 75 wt% Sb doping level in CdS. The incremental enhancement in the vari ous properties of a cell is explained on the basis of the modified ele ctrical, optical and structural properties of the thin film compositio ns.