GROWTH OF CUALTE2 FILMS BY RF-SPUTTERING

CuAlTe2 films have been grown by RF sputtering on both unheated and he ated glass substrates. The X-ray diffraction spectra exhibit one diffr action line at 24.60-degrees corresponding to the (112) direction whic h is the preferred orientation in the chalcopyrite phase. When deposit ed onto 150-degrees-C heated substrates, the formation of binary compo unds is favoured. The resistivity variations versus the temperature sh ow a peak around T = 140-degrees-C. In order to study the electrical p roperties of p-type CuAlTe2 samples, ohmic contacts were prepared by R F sputtering of Mo onto these films.