THE UNIAXIAL STRAIN EFFECT ON THE TERNARY ALLOY SEMICONDUCTOR GA1-XALXP

Authors
BADI N ABID H SOUDINI B AMRANE N DRIZ M DUFOUR JP AOURAG H KHELIFA B
Citation
N. Badi et al., THE UNIAXIAL STRAIN EFFECT ON THE TERNARY ALLOY SEMICONDUCTOR GA1-XALXP, Physica status solidi. b, Basic research, 184(2), 1994, pp. 365-372
Citations number
14
Categorie Soggetti
Physics, Condensed Matter
Journal title
Physica status solidi. b, Basic research → ACNP
ISSN journal
03701972
Volume
184
Issue
2
Year of publication
1994
Pages
365 - 372
Database
ISI
SICI code
0370-1972(1994)184:2<365:TUSEOT>2.0.ZU;2-9
Abstract
The effect of static uniaxial compression along the cubic direction [1 00] is studied. The empirical pseudo-potential method (EPM) within the so-called virtual crystal approximation (VCA) is used to compute the electronic charge densities at selected k-points of the valence and th e conduction band edges in Ga1-xAlxP. These charge densities are used to study the modification of the bonding and the electronic properties of the alloy with respect to the composition and the lattice constant variations along the [100] direction.