DONOR DOPING OF GA IN ZNO VARISTOR GRAIN-BOUNDARY

Authors
GUPTA TK
Citation
Tk. Gupta, DONOR DOPING OF GA IN ZNO VARISTOR GRAIN-BOUNDARY, Journal of materials research, 9(9), 1994, pp. 2213-2215
Citations number
5
Categorie Soggetti
Material Science
Journal title
Journal of materials research → ACNP
ISSN journal
08842914
Volume
9
Issue
9
Year of publication
1994
Pages
2213 - 2215
Database
ISI
SICI code
0884-2914(1994)9:9<2213:DDOGIZ>2.0.ZU;2-1
Abstract
The effect of Ga doping on the grain boundary properties of a ZnO vari stor has been presented in this note. Within the range of doping level studied, it is shown that Ga acts as a donor at the grain boundary an d behaves similar to that of Al.1 The grain boundary doping behavior o f both Ga and Al, when acting as donors, can therefore be represented by the same defect model.