CHANGE IN THE ELECTRONIC STATES OF GRAPHITE OVERLAYERS DEPENDING ON THICKNESS

Citation
A. Nagashima et al., CHANGE IN THE ELECTRONIC STATES OF GRAPHITE OVERLAYERS DEPENDING ON THICKNESS, Physical review. B, Condensed matter, 50(7), 1994, pp. 4756-4763
Citations number
45
Categorie Soggetti
Physics, Condensed Matter
ISSN journal
01631829
Volume
50
Issue
7
Year of publication
1994
Pages
4756 - 4763
Database
ISI
SICI code
0163-1829(1994)50:7<4756:CITESO>2.0.ZU;2-B
Abstract
Electronic states of graphite overlayers formed on the TaC(111) surfac e have been investigated with the use of scanning tunneling microscopy and photoelectron spectroscopy. The graphite film grows on the substr ate layer by layer. The thickness of the overlayer has been adjusted p recisely to be either one or two monolayers. The physical properties o f the monolayer graphite film are modified by chemical bonding at the interface. This interfacial bonding becomes weak upon the formation of the second layer of graphite, which makes the properties of the doubl e-layer graphite film similar to those of bulk graphite.