INTRINSIC INDUCTIVE CHARACTERISTICS OF RESONANT-TUNNELING

We have studied the current I(omega,t) = I-0(omega) + I-1(omega,t) thr ough a double-barrier resonant tunneling system (DBRTS) under a dc-ac bias. With a 2D emitter, the ac shift of the resonant lever can be det ermined from I-0(w omega), and the intrinsic inductance of a DBRTS is unambiguously defined from I-1(omega,t). For presently available DBRT diodes under maximum operation frequency, the photon replica cannot be observed in the I-V curve. With a 3D emitter, a quantum-equivalent-ci rcuit model can be constructed to calculate the maximum operation freq uency of the diode, with good agreement with the measured value.